The device is based on the principles of resistive memory, which can be used to create memory cells that are smaller, operate at a higher speed and offer more storage capacity than flash memory cells, the current industry standard.
The key advancement in the research is the creation of a zinc oxide nano-island on silicon. It eliminates the need for a second element called a selector device, which is often a diode.
Jianlin Liu, a professor of electrical engineering at UC Riverside who is one of the authors of the paper, said that this is a significant step as the electronics industry is considering wide-scale adoption of resistive memory as an alternative for flash memory.
Resistive memory is receiving significant attention from academia and the electronics industry because it has a simple structure, high-density integration, fast operation and long endurance.
Researchers have also found that resistive memory can be scaled down in the sub 10-nanometer scale.
The study is published in the journal Scientific Reports.
--ANI (Posted on 15-08-2013)